2N6109G

Overview

The onsemi 2N6109G is a single-element PNP silicon power bipolar transistor designed for high-current switching applications. It features a maximum collector current of 7 A and a collector-emitter breakdown voltage of 50 V. The device is housed in a TO-220AB plastic/epoxy flange-mount package with three through-hole terminals, supporting a maximum power dissipation of 40 W and an operating temperature up to 150 °C.

Feature Summary

• High current handling capability suitable for robust power switching tasks
• Thermal management optimized via metal-flange mounting design
• Robust construction utilizing silicon technology for reliable operation

Applications

• General-purpose power switching circuits
• Industrial control systems requiring medium-power transistor stages
• Audio amplifier output stages

Procurement Notes

Verify the specific manufacturer source, as historical data indicates production by Harris Semiconductor before acquisition by onsemi. Confirm that the component matches the TO-220AB flange-mount package and PNP polarity specifications required for your circuit design. Ensure the part number suffix corresponds to the correct packaging variant.

Selection Notes

Select this component when a PNP configuration is required for switching loads up to 7 A. The TO-220AB package facilitates direct heatsink attachment for thermal regulation. Consider the 50 V collector-emitter voltage rating to ensure adequate margin against transient spikes in the target application environment.

Part Context

This device belongs to the family of power bipolar transistors used in discrete semiconductor applications. It serves as a fundamental active element for controlling higher power levels using smaller signal inputs. The TO-220AB form factor is standard for through-hole mounting in industrial and consumer electronics hardware.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.