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The 2N6111 is an epitaxial-base PNP silicon transistor housed in a JEDEC TO-220 plastic package. It supports a collector current of -7 A and total dissipation of 40 W at 25 °C case temperature. Key voltage ratings include VCEO of -30 V, VCBO of -40 V, and VEBO of -5 V. The device features a maximum operating junction temperature of 150 °C with thermal resistance values of 3.12 °C/W (junction-to-case) and 70 °C/W (junction-to-ambient). DC current gain ranges from 2.3 to 150 depending on collector current.
Verify the component matches the STMicroelectronics datasheet specifications exactly. Confirm the package type is TO-220 and the marking corresponds to the 2N6111 part number. Check for any specific ordering suffixes that might indicate variations in packaging or tape-and-reel options. Ensure the supplier provides traceability documentation consistent with STMicroelectronics manufacturing standards.
Select this transistor for designs requiring high current capacity in a standard through-hole package. Consider the -30 V VCEO rating when designing circuits with higher supply voltages. Evaluate thermal management requirements based on the 40 W dissipation limit at 25 °C case temperature. Use the provided thermal resistance data to calculate junction temperatures under load conditions.
This component belongs to the family of silicon PNP switching transistors offered by STMicroelectronics. It is designed as a preferred sales type for general-purpose industrial applications. The device complements other NPN counterparts in the product line, providing designers with flexible options for push-pull or complementary configurations in power electronics.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the TO-220 package and electrical ratings. Verify compatibility with existing circuit board footprints and thermal interface materials.