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The Central Semiconductor Corp 2N6123 PBFREE is a single-element NPN silicon power bipolar transistor housed in a TO-220AB plastic/epoxy package. It supports a maximum collector current of 4 A and a collector-emitter breakdown voltage of 80 V. The device features a maximum power dissipation of 40 W and operates within a temperature range up to 150 °C.
Verify the specific plating configuration upon ordering, as the base part number allows for either lead-free or tin/lead products depending on availability. Confirm that the requested suffix matches the required environmental compliance standards before finalizing procurement.
Select this component for designs requiring an NPN power transistor with an 80 V collector-emitter rating and 4 A continuous current capability. Ensure the application provides adequate heatsinking to manage the 40 W power dissipation limit within the specified operating temperature range.
This device belongs to the 2N6121-6126 series manufactured by Central Semiconductor Corp. It is designed for general-purpose linear and switching applications, offering a standard through-hole mounting solution suitable for industrial and commercial electronic equipment.
Central Semiconductor has classified the 2N6123 PBFREE as End of Life (EOL) per notice PDN01250. No suggested replacement part numbers are provided in the official documentation.