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Product Detailed Parameters
- Description：80V 4A 40W TH TRANSISTOR-BIPOLAR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 1A, 4A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 1.5A, 2V
- Power - Max：40 W
- Frequency - Transition：2.5MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The 2N6126 PBFREE is a lead-free plated PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It features a TO-220-3 through-hole package designed for high-reliability applications. Key electrical specifications include a collector-emitter sustaining voltage of 45 V minimum, an emitter-base voltage of 5 V, and a collector current rating of 4 A. The device supports a power dissipation of 40 W and operates within a temperature range of -65°C to +150°C. With a transition frequency of 2.5 MHz and a collector-emitter saturation voltage of 1.4 V, it is suitable for power amplifier and switching circuit implementations.
Feature Summary
- High-reliability construction optimized for demanding environments
- Lead-free plating compliant with environmental standards
- Designed for efficient power amplifier and switching operations
Applications
- Power amplifier circuits
- High-speed switching applications
- General-purpose transistor stages
Procurement Notes
This component is scheduled for obsolescence and will be discontinued by the manufacturer. Verify current availability status directly with authorized distributors before initiating procurement processes. Ensure that the ordering suffix PBFREE is included to specify lead-free plated devices as required. Confirm end-of-life timelines to mitigate supply chain risks associated with this specific part number.
Selection Notes
Select this component when a robust PNP transistor with 4A current capability and 40W power dissipation is required in a TO-220-3 package. Consider its 2.5 MHz transition frequency for moderate-speed switching needs. Evaluate thermal management requirements given the operating temperature range up to 150°C. Verify compatibility with existing circuit designs requiring a 45V minimum sustaining voltage.
Part Context
The 2N6126 belongs to the family of single bipolar transistors produced by Central Semiconductor Corp. It is categorized under general-purpose power transistors intended for through-hole mounting. The PBFREE designation indicates compliance with lead-free manufacturing processes. This part serves as a discrete semiconductor solution for analog and digital power control applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the scheduled obsolescence, alternative components must be identified based on matching electrical parameters such as PNP configuration, 4A current rating, and TO-220-3 packaging. Consult manufacturer cross-reference guides for compatible replacements.
