2N6134

2N6134

$1.04
  • Description:TRANS PNP 80V 7A TO-220-3
  • Series:-

SKU:249dd418cd9b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 80V 7A TO-220-3
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 3.2A, 16A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:50 W
  • Frequency - Transition:2.5MHz
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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2N6134

Overview

The Harris Corporation 2N6134 is a silicon planar epitaxial transistor designed for high-frequency and high-power applications. It features a hermetically sealed metal case construction suitable for demanding environments. The device operates as an NPN power transistor with specific voltage and current ratings defined in its official datasheet. Thermal management is critical due to the power dissipation capabilities inherent to its package type.

Feature Summary

  • Hermetically sealed metal case construction for environmental protection
  • Silicon planar epitaxial design for reliable high-frequency operation
  • High power handling capability suitable for RF amplification

Applications

  • RF power amplification stages
  • High-frequency oscillator circuits
  • Military communication equipment transmitters

Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by L3Harris Technologies. Ensure the component matches the original Harris specifications rather than generic equivalents. Check for authenticity markers on the metal case to confirm it is not a counterfeit or obsolete surplus item lacking original documentation support.

Selection Notes

Select this component when hermetic sealing and high-frequency performance are required. Consider the thermal resistance of the metal case for heat sinking requirements. Verify that the pinout configuration matches the target circuit board layout. Ensure the operating frequency range aligns with the transistor's specified cutoff frequency limits for optimal efficiency.

Part Context

The 2N6134 belongs to the class of high-power NPN transistors historically produced for defense and aerospace applications. Harris Corporation was a primary supplier of such components for military radio systems. The part represents legacy technology often found in existing infrastructure requiring maintenance or replacement with equivalent ruggedized devices.

Replacement Considerations

Consult official cross-reference guides from L3Harris Technologies for direct replacements. Generic equivalents may lack the hermetic seal or specific RF characteristics. Verify that any substitute meets the same MIL-spec standards if used in regulated environments.

2N61342N6134
$1.04
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