2N6183

2N6183

  • Description:TRANS PNP 80V 10A TO-59
  • Series:-

SKU:ff80912b1251 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 80V 10A TO-59
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 200µA, 2mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:60 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:TO-210AA, TO-59-4, Stud
  • Supplier Device Package:TO-59

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2N6183

Overview

The Microchip Technology 2N6183 is a high-voltage silicon planar mesa rectifier designed for demanding power conversion applications. It features a single-phase configuration with a maximum repetitive peak reverse voltage of 7.5 kV and an average forward rectified current rating of 100 mA. The device utilizes a Package-S-2 axial leaded through-hole housing to ensure robust mechanical stability under thermal stress. Key electrical characteristics include a maximum non-repetitive peak surge current of 4 A, a forward voltage drop of 10 V at rated current, and a low reverse leakage current of 5 uA. It operates reliably within a junction temperature range of -65°C to +175°C, supporting a power dissipation of 1.5 W.

Feature Summary

  • High-voltage capability up to 7.5 kV for specialized power supply isolation
  • Wide operating temperature range from -65°C to +175°C for harsh environments
  • Robust axial leaded Package-S-2 construction for secure mounting

Applications

  • High-voltage DC power supplies
  • X-ray equipment power circuits
  • Industrial control systems requiring high isolation

Procurement Notes

Verify the specific manufacturer datasheet for the 2N6183 to confirm exact electrical tolerances and package dimensions before integration. Ensure that the procurement source provides official documentation regarding RoHS compliance status, as historical data indicates potential variations in environmental compliance for this component type. Cross-reference the part number with the manufacturer's current product lifecycle status to confirm availability and manufacturing continuity.

Selection Notes

Select the 2N6183 when circuit design requires high reverse voltage blocking capabilities combined with moderate current handling in a through-hole format. Consider its wide thermal operating range for applications exposed to extreme ambient temperatures. Evaluate the 10 V forward voltage drop against system efficiency requirements, as this value is higher than modern low-loss alternatives. Ensure the PCB layout accommodates the Package-S-2 form factor and provides adequate clearance for the high-voltage terminals.

Part Context

This component belongs to the family of high-voltage discrete rectifiers manufactured by Microchip Technology. It serves as a specialized solution for legacy or niche industrial designs where standard silicon diodes cannot withstand the required voltage stresses. The 2N6183 complements other high-voltage components in the manufacturer's portfolio, offering a reliable option for engineers designing isolated power stages or high-voltage test equipment.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements must match the 7.5 kV reverse voltage and 100 mA current ratings while maintaining compatible package dimensions.

2N61832N6183

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