SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 2N6189 is a PNP silicon bipolar junction transistor designed for medium-power applications. It features a maximum collector current of 10 A and a collector-emitter voltage rating of 100 V. The device has a minimum DC current gain (hFE) of 60 and operates with a power dissipation capacity of 60 W. Packaged in an isolated TO-59 stud mount configuration, it supports switching and wide-band amplifier functions.
Verify the specific manufacturer source when ordering, as the 2N6189 part number appears across multiple vendors including Microchip Technology, Solid State Devices, Inc., and others. Confirm that the component matches the required TO-59 package and electrical specifications before integration into final designs to ensure compatibility with system requirements.
Select this component for applications requiring robust PNP switching capabilities with high current handling. Ensure the design accommodates the 100 V breakdown voltage and 60 W power dissipation limits. Consider the stud mount packaging for thermal management needs in medium-power environments where standard surface-mount options are insufficient.
This transistor belongs to the family of medium-power PNP silicon transistors intended for general-purpose use. It serves as a discrete active element in electronic circuits, providing amplification or switching functions. The TO-59 package offers mechanical stability and thermal conductivity suitable for industrial and commercial electronics.
Cross-reference with other manufacturers' equivalents such as those from Solid State Devices Inc. Verify pinout compatibility and thermal resistance values when substituting.