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Product Detailed Parameters
- Description：TRANS PNP 80V 5A TO-5AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：10 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5AA
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Overview
The 2N6190 is a PNP silicon planar epitaxial transistor manufactured by Microchip Technology. It features a hermetically sealed TO-39 package designed for general-purpose applications. Key electrical specifications include a maximum collector-emitter voltage of 80 V and a maximum collector-base voltage of 80 V. The device supports a maximum DC collector current of 5 A with a power dissipation rating of 10 W. It operates within a temperature range of -65°C to +200°C, offering a minimum DC current gain (hFE) of 30 at 2 A and 2 V.
Feature Summary
- Hermetically sealed TO-39 package construction
- Silicon planar epitaxial technology
- High thermal stability up to 200°C
Applications
- General purpose switching applications
- Power amplifier circuits
- Industrial control systems
Procurement Notes
Verify the manufacturer designation carefully, as the 2N6190 part number is utilized by multiple suppliers including Central Semiconductor and New Jersey Semi-Conductor. Confirm that the specific unit received matches the required screening level, such as JAN or CECC options, if specified in your design requirements. Ensure the package type corresponds to the intended PCB layout or socket compatibility before finalizing procurement orders.
Selection Notes
Select this component when a high-current PNP transistor with robust thermal handling is required. The 5 A continuous current capability and 10 W power dissipation make it suitable for moderate power loads. Consider the TO-39 metal can package for its environmental sealing properties. Evaluate the 80 V breakdown voltage against circuit peak voltages to ensure adequate safety margins during operation.
Part Context
The 2N6190 belongs to the family of standard military-grade and commercial silicon bipolar junction transistors. It serves as a legacy replacement for older germanium devices, offering improved thermal performance and reliability. The part is commonly found in aerospace and defense electronics due to its hermetic sealing and wide operating temperature range.
Replacement Considerations
Cross-reference with other manufacturers' equivalents such as those from Central Semiconductor or New Jersey Semi-Conductor. Verify pinout compatibility and exact electrical parameter tolerances before substitution. Ensure the alternative source provides the same hermetic sealing standards if environmental protection is critical.
