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The 2N6193QFN/TR is a PNP power bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 5A. The device is housed in a QFN package and is designed for through-hole or surface-mount applications depending on the specific variant configuration, with a power dissipation capability of 1W. It operates within a temperature range of -65°C to +200°C, ensuring reliability in demanding environments.
Verify the exact package type (TO-39 vs QFN) as the base part number 2N6193 traditionally denotes TO-39, while the suffix QFN implies a different form factor. Confirm RoHS compliance status and ensure the supplier provides the official datasheet matching the specific suffix to avoid pinout mismatches. Check for military or aerospace qualification requirements if applicable.
Select this component when high-temperature stability is critical, given the 200°C junction limit. Ensure the circuit design accommodates the 100V VCEO rating and 5A Ic limit. Consider the thermal resistance of the chosen package for adequate heat dissipation at 1W power dissipation. Verify compatibility with PNP logic levels and drive requirements.
This component belongs to the family of high-reliability bipolar junction transistors from Microchip/Microsemi. It is often used in ruggedized applications where standard silicon limits are insufficient. The QFN variant offers a compact footprint compared to traditional hermetic packages, suitable for modern PCB designs requiring space efficiency without sacrificing thermal performance.
Public confirmed substitute part numbers: JANTXV2N6193, 2N6193.