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The Microchip Technology 2N6212 is a single PNP power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66-2 package. It features a maximum collector-emitter voltage (VCEO) of 225 V and a collector-base voltage (VCBO) of 275 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a maximum DC collector current of 2 A and dissipates up to 3 W of power. Operating temperatures range from -65°C to +200°C, ensuring reliability in high-temperature environments.
Verify the specific suffix code against the manufacturer datasheet to confirm exact electrical tolerances and testing criteria. Confirm RoHS compliance status as indicated in official documentation, noting that some legacy variants may differ. Ensure the TO-66-2 package dimensions match the target PCB footprint requirements before finalizing procurement.
Select this component when a PNP transistor with high voltage blocking capability and high-temperature tolerance is required. Compare the 2A current limit and 3W power dissipation against circuit load demands. Consider the TO-66 package size constraints and verify that the 225V VCEO rating exceeds the maximum circuit voltage spikes.
The 2N6212 belongs to the standard military-grade and industrial PNP power transistor family produced by Microchip Technology. It utilizes silicon technology and is housed in a hermetically sealed metal TO-66 case, providing superior thermal conductivity and environmental protection compared to plastic packages.
Consult official substitution lists for equivalent PNP transistors with matching VCEO, IC, and package specifications. Verify pinout compatibility for TO-66-2 replacements to ensure direct interchangeability without circuit modification.