SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 2N6212 is a silicon PNP power transistor housed in a TO-66 case. It is engineered for high-speed switching and high-voltage amplifier applications. The device supports a collector-emitter voltage of 300 V and a continuous collector current of 2.0 A. Key electrical parameters include a transition frequency (fT) of 20 MHz, a maximum power dissipation of 35 W at 25°C, and an operating junction temperature range from -65 to +200 °C.
Verify the specific procurement status before ordering, as this component has been classified as End of Life by the manufacturer. Confirm availability with authorized distributors or the supplier directly, noting that last purchase orders may be subject to specific timeframes and minimum order quantities depending on remaining inventory levels.
Select the 2N6212 when a PNP configuration is required for high-voltage environments exceeding 200 V. Ensure the thermal management design accommodates the specified thermal resistance and power dissipation limits. Verify that the application requirements align with the device's switching speed characteristics and current handling capabilities.
This component belongs to a series of silicon PNP power transistors manufactured by Central Semiconductor Corp. The series includes variants such as the 2N6211 and 2N6213, which share similar physical packaging but differ in their maximum voltage ratings. These devices are standardized within the manufacturer's discrete semiconductor portfolio.
No direct replacement part numbers are currently available from the manufacturer for this discontinued item. Users requiring an alternative should consult the manufacturer's support channels for potential alternate sources or custom solutions.