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The Microchip Technology 2N6213 is a PNP high-power silicon bipolar junction transistor (BJT) designed for through-hole mounting in TO-66-2 packages. It operates with a maximum collector-emitter voltage of 225 V and a collector-base voltage of 275 V, supporting a maximum DC collector current of 2 A. The device handles up to 3 W of power dissipation and functions within an extended temperature range from -55 °C to +200 °C. Qualified per MIL-PRF-19500/461, it serves as a robust discrete semiconductor component for high-voltage switching applications.
Verify the specific manufacturer source, as this part number appears in catalogs from both Microchip Technology and Microsemi Corporation. Confirm that the procurement matches the required military qualification standard MIL-PRF-19500/461. Ensure the package type is strictly TO-66-2 for mechanical compatibility. Check for any updated environmental compliance declarations if required by your system specifications.
Select this component when a PNP configuration is required for high-voltage applications exceeding 200V. The TO-66 package provides superior thermal performance compared to plastic alternatives. Consider the 2A current limit and 3W power dissipation constraints during circuit design. This device is suitable for environments demanding high reliability and wide temperature operation capabilities.
The 2N6213 belongs to the family of high-power silicon PNP transistors. It shares functional similarities with other military-grade devices like the JANTXV2N6213. These components are typically used in critical infrastructure where failure is not an option. The technology relies on advanced silicon processing to ensure stable performance under extreme electrical and thermal stress conditions.
Public confirmed substitute part numbers include JANTXV2N6213.