2N6233

Overview

The Microchip Technology 2N6233 is a high-voltage NPN silicon bipolar junction transistor designed for general-purpose amplifier and switching applications. It features a collector current rating of 5.0 A, a collector-emitter voltage of 225 V, and a power dissipation capacity of 50 W. The device utilizes a TO-66 through-hole package configuration.

Feature Summary

• Designed for high-voltage amplifier and switching applications
• Capable of handling significant collector current loads
• Constructed with robust silicon technology for thermal stability

Applications

• General-purpose high voltage amplification
• Power switching circuits
• Motor control systems requiring real-time processing support

Procurement Notes

Verify the specific manufacturer source when procuring this component, as historical data sheets indicate variations between Motorola and New Jersey Semi-Conductor products. Confirm the exact pinout and maximum ratings against the official datasheet provided by the current supplier to ensure compatibility with existing circuit designs.

Selection Notes

Select the 2N6233 for applications requiring high voltage tolerance and substantial current handling capabilities within a through-hole form factor. Ensure the operating environment supports the specified power dissipation limits and that the TO-66 package dimensions fit the intended mechanical constraints.

Part Context

This component belongs to the family of high-voltage NPN silicon transistors. While historically associated with manufacturers like Motorola, Microchip Technology now offers this part number. It serves as a discrete solution for power management tasks where integrated circuits may not provide sufficient voltage or current isolation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify electrical equivalence with other high-voltage NPN transistors if direct replacement is required.