2N6247

Overview

The 2N6247 is a silicon PNP power transistor designed for high-power applications. It features a TO-3 package and supports a maximum collector current of 15A with a transition frequency of 10 MHz. The device offers a collector-base breakdown voltage (Vbr CBO) of 90V, making it suitable for robust switching and amplification tasks in industrial environments.

Feature Summary

• High power handling capability with 125W rating
• Robust TO-3 metal case construction
• PNP polarity configuration for complementary circuits

Applications

• High power audio amplification stages
• Industrial motor control switching
• Power supply output regulation

Procurement Notes

Verify the manufacturer source carefully as the 2N6247 is historically associated with multiple vendors including Central Semiconductor and Savantic. Confirm the specific datasheet version to ensure compatibility with required thermal and electrical specifications. Check for MIL-PRF-19500 high-reliability suffixes if aerospace or military grade performance is required.

Selection Notes

Select this component when a high-current PNP transistor in a TO-3 package is needed. Ensure the application voltage does not exceed the 90V collector-base rating. Consider thermal management requirements due to the 125W power dissipation capability. Verify pinout compatibility with existing circuit designs before integration.

Part Context

The 2N6247 belongs to the family of silicon PNP power transistors. It is commonly used in legacy and modern high-power systems requiring reliable switching. The TO-3 package provides excellent heat dissipation. While originally produced by various manufacturers, the part remains relevant for high-current applications.

Replacement Considerations

Public confirmed substitutes include equivalent PNP power transistors in TO-3 packages. Verify matching current and voltage ratings. Cross-reference with datasheets from Central Semiconductor or similar suppliers for direct replacements.