2N6281

2N6281

$76.52
  • Description:NPN TRANSISTOR
  • Series:*

SKU:7ff6571f4bdd Category: Brand:

  
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Product Detailed Parameters

  • Description:NPN TRANSISTOR
  • Series:*
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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2N6281

Overview

The Microchip Technology 2N6281 is a single NPN power bipolar junction transistor (BJT) configured as a Darlington pair. It is designed for through-hole mounting in the TO-204AA-2 package. The device supports a maximum collector-emitter voltage of 100 V and a continuous collector current of 20 A. It features a high power dissipation rating of 175 W and operates within an extended temperature range from -65 °C to +200 °C. The minimum DC current gain is specified at 8, with a maximum operating frequency of 1 MHz.

Feature Summary

  • Darlington configuration providing high current gain capability
  • High power dissipation capacity suitable for demanding loads
  • Extended thermal operation up to 200 °C

Applications

  • High-current switching applications
  • Power amplifier stages
  • Industrial motor control systems

Procurement Notes

Verify the specific revision and lot traceability upon order confirmation. Confirm that the TO-204AA-2 lead frame material matches your thermal management requirements. Ensure proper heat sinking is integrated into the design to maintain junction temperatures within the specified limits during operation.

Selection Notes

Select this component when high current handling and robust thermal performance are required. The Darlington structure simplifies drive circuitry by reducing base current demands. Evaluate the thermal resistance characteristics against your system's cooling capabilities to ensure reliable long-term operation under load conditions.

Part Context

This part belongs to Microchip's legacy discrete semiconductor portfolio, maintaining specifications for industrial and military-grade environments. It serves as a replacement for older silicon-controlled rectifier or standard BJT designs requiring higher gain and current density in power electronics applications.

Replacement Considerations

Consult official substitution guides for equivalent Darlington power transistors. Verify pinout compatibility and thermal interface dimensions before integrating alternative components into existing board layouts.

2N62812N6281
$76.52
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