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The onsemi 2N6286G is a PNP complementary silicon power transistor in the Darlington series. It features an 80 Vdc collector-emitter voltage rating and supports a continuous collector current of 20 A with peak currents up to 40 A. The device provides a typical DC current gain of 4000 at 10 Adc and dissipates 160 W at 25°C case temperature. Packaged in a lead-free TO-204AA (TO-3) housing, it operates within a junction temperature range of -65°C to +200°C.
Verify the specific ordering suffix 'G' confirms the lead-free package status as documented in the manufacturer's ordering information table. Confirm that the component matches the PNP polarity variant within the 2N628x family. Ensure procurement channels provide the official datasheet revision 5 or later to validate the electrical characteristics and maximum ratings against current manufacturing standards.
Select this component when a PNP Darlington configuration is required with an 80 V breakdown voltage. The device is suitable for designs needing high current gain without external biasing networks due to integrated shunt resistors. Consider the TO-204AA package dimensions and thermal resistance values for heat sink calculations. Verify compatibility with the complementary NPN 2N6284 for push-pull topologies.
The 2N6286G belongs to the 2N628x family of complementary silicon power transistors manufactured by onsemi. This series includes the NPN 2N6284 and the PNP 2N6287 variants. All devices share similar monolithic construction techniques and are designed for robust performance in power amplification and switching roles within industrial and commercial electronic systems.
The 2N6286 is functionally interchangeable with other 2N6286 part numbers from the same manufacturer family. Cross-referencing with the 2N6287 requires verifying polarity differences in circuit design.