2N6288G

Overview

The 2N6288G is a silicon NPN power transistor manufactured by onsemi, housed in a TO-220AB through-hole package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 7 A. The device supports a maximum power dissipation of 40 W at 25°C ambient temperature. It operates within a junction temperature range of -65°C to +150°C and includes a minimum DC current gain (hFE) of 30.

Feature Summary

• High current handling capability for robust switching applications
• Integrated mounting base for efficient thermal management
• Designed for high-voltage power amplifier circuits

Applications

• Power amplifier circuits
• General-purpose switching applications

Procurement Notes

Verify the specific suffix 'G' against the manufacturer's official documentation to confirm compliance with RoHS directives and material declarations. Ensure the TO-220AB package dimensions match the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a single NPN bipolar junction transistor is required for moderate voltage levels up to 30 V. The TO-220AB package facilitates direct heatsink attachment for thermal regulation during high-current operation exceeding standard surface-mount limitations.

Part Context

This part belongs to the 2N6288 series of silicon NPN power transistors. It serves as a complementary or alternative device to other members of the family, such as the 2N6290 and 2N6292, which share similar structural characteristics but may differ in specific electrical ratings.

Replacement Considerations

The 2N6288U2 is a documented substitute variant featuring the same TO-220AB package and core specifications.