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The onsemi 2N6292 is a silicon NPN power bipolar transistor designed for high-current switching applications. It features a maximum collector current of 7A and a collector-emitter breakdown voltage of 70V. The device is housed in a TO-220AB flange mount package with plastic/epoxy encapsulation. Key electrical specifications include a minimum DC current gain (hFE) of 2.3, a maximum collector capacitance of 250 pF, and a maximum power dissipation of 40W. The component supports operating temperatures up to 150°C and utilizes through-hole terminals.
Verify the manufacturer origin carefully, as this component type was historically produced by multiple vendors including Harris, Intersil, TT Electronics, and Motorola/NXP. Confirm that the specific part number corresponds to the intended electrical characteristics and package style before procurement. Ensure compatibility with existing circuit designs regarding pinout and thermal requirements.
Select this component when a robust NPN power transistor with 7A continuous current capacity is required. The TO-220AB package facilitates effective heat dissipation for moderate power levels. Consider the low minimum hFE value, which indicates suitability for saturated switching rather than linear amplification. Evaluate thermal resistance parameters against the specific heatsinking strategy employed in the target application.
This component belongs to the family of silicon NPN power transistors commonly used in industrial and consumer electronics. Similar devices often serve as complements to PNP types like the 2N6107 series. The TO-220AB form factor remains a standard for through-hole power semiconductor implementations requiring reliable mechanical mounting and thermal conductivity.
Cross-reference with other manufacturers' equivalents such as those from TT Electronics or Intersil/Renesas. Verify that substitute parts maintain identical pin configurations and absolute maximum ratings to ensure direct interchangeability without circuit modification.