ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：4A 60V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 8mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：50 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
Download product information
FAQ
Is the 2N6294 PBFREE a standard NPN silicon transistor?
No, it is a PNP silicon epitaxial planar transistor.
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter breakdown voltage (VCEO) is -40 V.
Does this part use a surface mount package?
No, it utilizes a TO-18 metal can through-hole package.
