2N6296 PBFREE

Overview

The 2N6296 PBFREE is a silicon PNP power transistor manufactured by Central Semiconductor Corp. It utilizes a Darlington configuration housed in a TO-66 package. The device is designed for high gain amplifier and medium speed switching applications. Key electrical characteristics include a collector-base voltage of 100V, a collector-emitter voltage of 80V, and an emitter-base voltage of 7V. The maximum continuous collector current is rated at 5A with a total power dissipation of 40W.

Feature Summary

• Darlington configuration providing high current gain
• Silicon PNP construction for robust performance
• TO-66 metal can package suitable for high-power thermal management

Applications

• High gain amplifier circuits
• Medium speed switching applications

Procurement Notes

Verify the specific datasheet version before procurement as specifications may vary between manufacturers using this part number. Confirm RoHS compliance status and package pinout compatibility with existing designs. Check for end-of-life notifications or discontinuance alerts from Central Semiconductor to ensure long-term supply availability.

Selection Notes

Select this component when a high-gain PNP transistor is required for medium-speed operations. Ensure the design accommodates the TO-66 package dimensions and thermal requirements. Verify that the 5A current rating and 40W power dissipation meet the circuit demands under expected operating temperatures.

Part Context

This part belongs to the family of silicon PNP power transistors offered by Central Semiconductor. It serves as a complement to other devices in similar series, such as the 2N6294 and 2N6295, which share comparable structural characteristics but may differ in specific voltage or current ratings.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official manufacturer cross-reference guides or datasheets for verified equivalents.