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Product Detailed Parameters
- Description：4A 80V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：50 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The 2N6297 TIN/LEAD is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 80 V. The device supports a maximum DC collector current of 5 A to 8 A, with a power dissipation rating of 50 W. Key electrical parameters include an emitter-base voltage (VEBO) of 5.0 V and a collector-emitter saturation voltage of 2 V. It utilizes a through-hole mounting style in a TO-66 package.
Feature Summary
- High-power capability with 50 W dissipation rating
- Robust 80 V voltage ratings for collector-emitter and collector-base
- Designed for high-current applications up to 8 A
- Through-hole construction for reliable mechanical mounting
Applications
- High-power switching circuits
- Linear amplifier stages requiring high current drive
- Industrial control systems utilizing through-hole topology
- Power supply output stages
Procurement Notes
Verify the specific manufacturer datasheet for the 2N6297 TIN/LEAD to confirm exact current limits and thermal characteristics. Ensure the tin/lead plating specification aligns with project requirements. Confirm package dimensions against the TO-66 standard before integration. Request official documentation to validate performance under extreme temperature conditions.
Selection Notes
Select this component when high current handling and substantial power dissipation are required in a through-hole format. The 80 V rating suits moderate voltage applications. Compare thermal resistance values against available heat sinking options. Consider the physical size of the TO-66 package for board layout constraints relative to lower-power alternatives.
Part Context
This part belongs to the Central Semiconductor bipolar transistor lineup, specifically designed for robust industrial and commercial electronics. The 2N6297 variant emphasizes high power and current capacity compared to smaller signal transistors. It serves as a critical active element in power management and amplification architectures where reliability and thermal stability are paramount.
Replacement Considerations
The 2N6296 TIN/LEAD is a documented alternative within the same product family from Central Semiconductor. Verify that the Darlington configuration of the 2N6296 meets the specific gain and speed requirements of the circuit design before substitution.
