2N6297

$22.64

Description：PNP TRANSISTOR
Series：*

SKU:13dd3d3fbfa9 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：PNP TRANSISTOR
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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2N6297

Overview

The Microchip Technology 2N6297 is a silicon PNP power transistor configured as a Darlington pair. It operates in the TO-66 metal can package with two pins and an isolated case connection. The device supports a maximum collector-emitter voltage of -80 V and a continuous collector current of 4 A. Peak pulse collector current reaches 16 A, while total power dissipation is rated at 50 W. The component is designed for high-reliability applications requiring robust switching capabilities.

Feature Summary

Darlington configuration providing high current gain
Robust TO-66 metal can construction for thermal stability
High peak pulse current handling capability

Applications

High-power switching circuits
Industrial control systems
Power amplifier stages

Procurement Notes

Verify the specific manufacturer source when ordering, as multiple vendors including Central Semiconductor produce this part number. Confirm lead times and availability directly with suppliers. Ensure the selected unit meets the required RoHS or non-RoHS specifications based on project constraints. Cross-reference datasheets to confirm pinout compatibility with existing designs.

Selection Notes

Select the 2N6297 for applications demanding high current gain and ruggedness. The TO-66 package offers superior heat dissipation compared to plastic alternatives. Consider the 80 V voltage rating to ensure adequate margin for inductive loads. Evaluate thermal resistance requirements for the specific mounting environment.

Part Context

This component belongs to the class of bipolar junction transistors (BJT) specifically designed as power devices. It serves as a discrete semiconductor solution for amplification and switching tasks. The part is widely recognized in industrial electronics for its durability and performance under stress conditions.