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Product Detailed Parameters
- Description：8A 60V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 16mA, 4A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 4A, 3V
- Power - Max：75 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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FAQ
Is the 2N6298 PBFREE an NPN or PNP transistor?
The 2N6298 is a PNP bipolar junction transistor (BJT).
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter breakdown voltage (VCEO) is -40 V.
Does the 'PBFREE' suffix indicate a different electrical function than the standard 2N6298?
No, the 'PBFREE' suffix indicates lead-free compliance and does not alter the electrical specifications or functionality of the device.
