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Product Detailed Parameters
- Description：8A 60V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 16mA, 4A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 4A, 3V
- Power - Max：75 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6298 TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a collector-emitter voltage (Vceo) of 60 V and a collector-base voltage (Vcbo) of 60 V. The device supports a maximum continuous collector current of 8.0 A with a power dissipation rating of 75 W. It includes an emitter-base voltage (Vebo) of 5.0 V. The component utilizes tin/lead plating and operates within a standard temperature range.
Feature Summary
- High current handling capability up to 8.0 A
- Robust power dissipation rated at 75 W
- Symmetric voltage ratings of 60 V for both collector-emitter and collector-base configurations
Applications
- High-power switching circuits
- Linear amplifier stages requiring high current drive
- Power supply regulation modules
Procurement Notes
Verify the specific ordering suffix requirements when requesting tin/lead plated devices from the manufacturer. Confirm that the requested part number explicitly includes the designated plating designation to ensure compliance with material specifications. Cross-reference the datasheet for environmental compliance status and lead time estimates prior to finalizing procurement orders.
Selection Notes
Select this component for applications demanding high current capacity and significant power dissipation in a compact through-hole form factor. Ensure the circuit design accommodates the 75 W thermal requirements and the 60 V voltage limits. Consider the TO-92-3 package constraints for heat sinking and board layout compared to higher power packages.
Part Context
This device belongs to the Central Semiconductor PNP bipolar transistor series, offering robust performance for industrial and commercial electronics. It serves as a discrete solution for power management tasks where through-hole reliability is preferred over surface-mount alternatives.
Replacement Considerations
Equivalent parts include the 2N6298 PBFREE variant from Central Semiconductor Corp. Verify pinout compatibility and thermal characteristics when substituting.
