2N6298

2N6298

$27.63
  • Description:TRANS PNP DARL 60V 8A TO66
  • Series:-

SKU:c31c414b1f23 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 60V 8A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 80mA, 8A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:64 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N6298

Overview

The Microchip Technology 2N6298 is a PNP power bipolar junction transistor configured as a Darlington pair. It is designed for through-hole mounting in the TO-3 metal can package. The device supports a maximum collector-emitter voltage of 60V and operates within a temperature range of -65°C to +175°C. It features a high current gain characteristic typical of Darlington structures, making it suitable for high-power switching and amplification applications requiring robust thermal performance.

Feature Summary

  • Darlington configuration providing high current gain
  • PNP polarity for complementary circuit designs
  • Metal can (TO-3) package for superior heat dissipation
  • Extended operating temperature range up to 175°C

Applications

  • High-power audio amplifier output stages
  • Industrial motor control circuits
  • Power supply regulation systems
  • Complementary symmetry driver circuits

Procurement Notes

Verify the specific manufacturer lot code and date code against the latest datasheet revision history. Confirm that the TO-3 package insulation requirements match your application's isolation needs. Check for any product change notifications regarding material composition or pinout modifications before finalizing procurement specifications.

Selection Notes

Select this component when high current drive capability and thermal stability are required in a through-hole format. Ensure the circuit design accounts for the higher saturation voltage inherent to Darlington configurations compared to single-transistor alternatives. Verify that the 60V voltage rating exceeds the maximum peak reverse voltage expected in the operational environment.

Part Context

This part belongs to the legacy discrete semiconductor portfolio maintained by Microchip Technology. It serves as a replacement for older industry-standard PNP Darlington transistors. The TO-3 package allows for direct mounting to heatsinks, facilitating its use in high-power analog and digital switching applications where surface-mount options may lack sufficient thermal handling capacity.

Replacement Considerations

Consult official cross-reference lists for equivalent PNP Darlington transistors in TO-3 packages. Verify pinout compatibility and thermal resistance values before substituting with parts from other manufacturers. Ensure replacement devices meet the same 60V rating and temperature specifications.

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