2N6301 PBFREE

2N6301 PBFREE

$8.42
  • Description:8A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-

SKU:2da0581b0d4a Category: Brand:

  
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Product Detailed Parameters

  • Description:8A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:75 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66
  • Grade:-
  • Qualification:-

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2N6301 PBFREE

Overview

The 2N6301 PBFREE is a silicon NPN single bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-66-2 through-hole package and supports a collector-emitter voltage of 80 V with a continuous collector current of 8 A. The device dissipates up to 75 W of power and features a transition frequency of 4 MHz. It operates within a temperature range of -65°C to +200°C, offering high DC current gain ranging from 750 to 18000 at specified test conditions.

Feature Summary

  • High power handling capability with 75 W dissipation rating
  • Extended thermal stability supporting operation up to +200°C
  • High DC current gain for efficient switching applications

Applications

  • High-power switching circuits
  • Audio amplifier output stages
  • Industrial control systems

Procurement Notes

Verify the specific RoHS compliance status directly with the manufacturer or authorized distributor documentation before integration. Confirm that the TO-66-2 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 75 W power dissipation rating under actual operating conditions to maintain reliability.

Selection Notes

Select this component when high current capacity and robust thermal performance are required in a hermetically sealed metal can package. The TO-66 form factor provides superior heat dissipation compared to plastic packages. Consider the 8 A current limit and 80 V voltage rating to ensure the device remains within safe operating areas during peak load conditions.

Part Context

This part belongs to the 2N63 series of high-power NPN transistors produced by Central Semiconductor. The series is designed for demanding applications requiring reliable performance in harsh environments. The PBFREE suffix indicates lead-free manufacturing compliant with environmental directives.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives within the same voltage and current ratings. Verify thermal resistance characteristics and package compatibility before substituting.

2N6301 PBFREE2N6301 PBFREE
$8.42
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