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The 2N6301 PBFREE is a silicon NPN single bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-66-2 through-hole package and supports a collector-emitter voltage of 80 V with a continuous collector current of 8 A. The device dissipates up to 75 W of power and features a transition frequency of 4 MHz. It operates within a temperature range of -65°C to +200°C, offering high DC current gain ranging from 750 to 18000 at specified test conditions.
Verify the specific RoHS compliance status directly with the manufacturer or authorized distributor documentation before integration. Confirm that the TO-66-2 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 75 W power dissipation rating under actual operating conditions to maintain reliability.
Select this component when high current capacity and robust thermal performance are required in a hermetically sealed metal can package. The TO-66 form factor provides superior heat dissipation compared to plastic packages. Consider the 8 A current limit and 80 V voltage rating to ensure the device remains within safe operating areas during peak load conditions.
This part belongs to the 2N63 series of high-power NPN transistors produced by Central Semiconductor. The series is designed for demanding applications requiring reliable performance in harsh environments. The PBFREE suffix indicates lead-free manufacturing compliant with environmental directives.
Consult official datasheets for pin-compatible alternatives within the same voltage and current ratings. Verify thermal resistance characteristics and package compatibility before substituting.