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Product Detailed Parameters
- Description：TRANS NPN 250V 8A TO204AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：5V @ 2A, 8A
- Current - Collector Cutoff (Max)：50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 3A, 5V
- Power - Max：125 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204AA (TO-3)
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Overview
The Microchip Technology 2N6306T1 is an NPN silicon power bipolar junction transistor (BJT) designed for high-voltage amplifier and switching applications. It features a through-hole TO-204AA (TO-3) package configuration. Key electrical ratings include a maximum collector current of 8 A, a collector-emitter voltage (Vceo) of 250 V, and a collector-base voltage (Vcbo) of 500 V. The device has a maximum emitter-base voltage (Vebo) of 8 V and a power dissipation rating of 125 W. It operates with a saturation voltage of 5 V.
Feature Summary
- Designed for general-purpose high-voltage amplifier and switching applications
- Utilizes NPN silicon technology for robust power handling
- Configured in a durable through-hole TO-204AA (TO-3) package
Applications
- High-voltage amplifier circuits
- Power switching applications
- General-purpose transistor stages requiring high voltage tolerance
Procurement Notes
Verify component authenticity and datasheet alignment when sourcing the 2N6306T1. Note that availability may be restricted or limited due to lifecycle status. Confirm package integrity and pinout compatibility before integration. Ensure storage conditions meet semiconductor standards to prevent degradation. Cross-reference official Microchip documentation for any specific handling requirements.
Selection Notes
Select the 2N6306T1 for designs requiring high voltage isolation and substantial current capacity. The TO-3 package offers effective thermal management for power applications. Consider the 250 V collector-emitter rating for high-side switching or linear regulation tasks. Evaluate thermal resistance requirements against the 125 W dissipation limit. Ensure base drive capabilities support the necessary collector current levels.
Part Context
The 2N6306T1 belongs to the 2N6306/2N6308 family of high-voltage NPN power transistors. These components are engineered for reliability in demanding electronic environments. The T1 suffix typically denotes a specific tape-and-reel or bulk packaging variant, though the core electrical characteristics remain consistent with the standard 2N6306 designation. This part serves as a legacy solution for established high-power circuit architectures.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify direct replacements only through official Microchip Technology channels or authorized distributors. Do not assume functional equivalence with generic NPN power transistors without comprehensive parameter matching.
