2N6316

2N6316

$22.81
  • Description:TRANS NPN 80V 7A TO66
  • Series:-

SKU:4c13d01f6eab Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 80V 7A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 1.75A, 7A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 500mA, 4V
  • Power - Max:90 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N6316

Overview

The Microchip Technology 2N6316 is a silicon-based NPN power bipolar junction transistor (BJT) designed for high-power applications. Manufactured by Microchip, this component utilizes a through-hole mounting style within a specific package configuration suitable for robust circuit integration. As a discrete semiconductor device, it serves as a critical switching or amplifying element in electronic systems requiring reliable performance under demanding electrical conditions.

Feature Summary

  • Constructed using silicon technology for stable operation
  • Designed for high-power handling capabilities
  • Configured as an NPN type bipolar junction transistor

Applications

  • High-power switching circuits
  • Power amplifier stages
  • Industrial control systems

Procurement Notes

Verify the exact package type and pinout configuration against the official Microchip datasheet before integration. Confirm that the procurement channel provides authentic components with traceable documentation. Ensure compatibility with existing thermal management solutions due to the power rating of the device. Check for any recent product change notifications that might affect mechanical dimensions or electrical characteristics.

Selection Notes

Select this component when a high-power NPN BJT is required for discrete switching or amplification tasks. Evaluate the thermal resistance and power dissipation limits relative to the application's heat sink requirements. Compare the current gain and breakdown voltages against the circuit's operational demands to ensure adequate margin. Consider the through-hole packaging constraints during PCB layout design.

Part Context

The 2N6316 belongs to the family of power bipolar transistors offered by Microchip Technology. It is part of the broader portfolio of discrete semiconductors used in industrial and commercial electronics. This specific model represents a standard industry designation for a high-power NPN device, often utilized in legacy designs or specialized power applications where discrete components are preferred over integrated modules.

Replacement Considerations

Consult the official Microchip datasheet for direct replacements or cross-reference lists. Verify that any substitute component matches the pinout, voltage ratings, and power dissipation capabilities. Ensure that alternative parts meet the same reliability standards required for the original application.

2N63162N6316
$22.81
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