2N6326

Overview

The 2N6326 is an NPN power transistor manufactured by Microchip Technology. It features a maximum collector current of 30 A and a maximum power dissipation of 114 W. The device has a minimum DC current gain (hFE) of 6 and a nominal transition frequency (fT) of 3 MHz. It supports a maximum operating temperature of 200 °C. The component is designed for through-hole mounting and utilizes a single configuration.

Feature Summary

• Capable of handling high collector currents up to 30 A
• Supports elevated thermal environments with operation up to 200 °C
• Designed for robust power switching applications

Applications

• High-current power switching circuits
• Industrial control systems requiring durable transistors
• Power amplification stages

Procurement Notes

Verify the manufacturer source carefully, as the 2N6326 designation was historically associated with multiple vendors including Boca Semiconductor. Confirm that the specific unit supplied meets the required electrical specifications for current and power dissipation. Ensure the package type matches the intended through-hole design requirements before integration.

Selection Notes

Select this component when high current capacity and thermal resilience are primary requirements. The low current gain suggests it may be best suited for saturated switching applications rather than linear amplification. Verify that the 114 W power dissipation rating aligns with the thermal management capabilities of the final assembly.

Part Context

This part belongs to the category of discrete bipolar junction transistors. It serves as a fundamental building block for power electronics. The NPN polarity indicates its use in standard switching topologies where current flows from collector to emitter. Its specifications target industrial and heavy-duty electronic environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.