2N6328

$103.67

Description：TRANS NPN 100V 30A TO-3
Series：-

SKU:65c7d56df777 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 100V 30A TO-3
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：30 A
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：200 W
Frequency - Transition：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-3

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2N6328

Overview

The Microchip Technology 2N6328 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3 package. It features a maximum collector-emitter breakdown voltage of 100 V and a continuous collector current rating of 30 A. The device supports a maximum power dissipation of 200 W, making it suitable for high-current switching applications. Operating temperatures range from -65°C to 175°C junction temperature.

Feature Summary

High current handling capability with a 30 A collector current rating
Robust power dissipation up to 200 W for demanding load conditions
Wide thermal operating range extending to 175°C junction temperature

Applications

High-power switching circuits requiring robust PNP control
Industrial motor drive interfaces
Heavy-duty relay driver stages

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and lead condition prior to installation. Ensure thermal management solutions align with the 200 W dissipation rating. Validate that system voltage and current limits remain within the 100 V and 30 A boundaries defined for this specific part number.

Selection Notes

Select this component when high current capacity and ruggedness are required in a through-hole configuration. The TO-3 package provides superior heat dissipation compared to smaller surface-mount alternatives. Consider the 100 V breakdown limit when designing for inductive loads or higher supply voltages. Evaluate thermal resistance requirements to maintain junction temperature within the specified 175°C maximum during operation.

Part Context

This device belongs to the family of high-power discrete semiconductors manufactured by Microchip Technology. It serves as a fundamental building block for power electronics, offering reliable performance in harsh environments. The TO-3 metal can package ensures mechanical stability and efficient thermal transfer, distinguishing it from plastic-packaged counterparts in industrial and aerospace applications.