2N6331

Overview

The Microchip Technology 2N6331 is a single PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3 package. It features a maximum collector-emitter breakdown voltage of 100 V and a continuous collector current rating of 30 A. The device supports a maximum power dissipation of 200 W and operates up to a junction temperature of 200 °C. With a minimum DC current gain (hFE) of 6 and a transition frequency of 3 MHz, it serves as a robust discrete semiconductor component for high-power switching applications.

Feature Summary

• High power handling capability with 200 W dissipation rating
• Robust current capacity supporting up to 30 A collector current
• Extended thermal performance allowing operation at temperatures up to 200 °C
• Durable TO-3 through-hole packaging for industrial environments

Applications

• High-power linear regulation circuits
• Industrial motor control systems
• Heavy-duty switching applications requiring high current handling

Procurement Notes

Verify compliance requirements carefully, as this specific part does not meet RoHS standards. Confirm that the TO-3 through-hole package aligns with your PCB design constraints. Ensure thermal management solutions are adequate for the 200 W dissipation rating. Check for any specific military or aerospace qualification markings if required for your application, as variants may exist.

Selection Notes

Select this component when high current and power dissipation are critical. The TO-3 package offers superior heat sinking compared to surface-mount options. Consider the low hFE minimum when designing base drive circuits. Verify that the 100 V breakdown voltage meets the system's peak voltage requirements. Evaluate thermal resistance and heatsinking needs to maintain safe operating temperatures under load.

Part Context

This component belongs to the family of discrete bipolar junction transistors manufactured by Microchip Technology. It utilizes the legacy TO-204AA (TO-3) metal can package, which is standard for high-power devices. The product falls under the category of single NPN/PNP transistors within the broader semiconductor portfolio, distinct from integrated circuits or diodes.

Replacement Considerations

Public confirmed substitute part numbers include 2N6381, 2N6228, 2N6229, 2N6226, 2N6378, 2N6382, 2N6377, and 2N6380. Verify pinout compatibility and electrical parameter margins before substitution.