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The onsemi 2N6341G is a high-power NPN silicon transistor housed in a TO-204AA (TO-3) package. It features a minimum collector-emitter sustaining voltage of 150 Vdc and supports a continuous collector current of 25 Adc with peak ratings up to 50 Adc. The device provides a DC current gain ranging from 12 to 120 depending on the operating current, alongside low saturation voltages of 1.8 Vdc at 25 Adc. Designed for robust performance, it operates within a junction temperature range of -65°C to +200°C and includes Pb-free packaging options.
Verify that the ordering suffix 'G' confirms Pb-free compliance as specified in the datasheet. Confirm the package type matches the required TO-204AA outline. Ensure the application environment stays within the rated thermal limits and voltage specifications. Check for any specific military grade variants if higher reliability levels are required beyond standard commercial grades.
Select this component when high voltage blocking capability and substantial current handling are necessary. The TO-3 package facilitates effective heat dissipation through direct mounting. Consider the specific hFE requirements for the intended drive current. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions to ensure safe operating area compliance.
This part belongs to the 2N6338/2N6341 family of high-power NPN transistors manufactured by onsemi. The series is designed to meet rigorous standards for power switching and amplification. The 2N6341 variant specifically offers higher voltage ratings compared to its counterpart, making it suitable for demanding high-voltage applications requiring robust silicon power devices.
Direct substitute part numbers include 2N6341.