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The Microchip Technology 2N6384 is an NPN silicon power Darlington transistor designed for high-current applications. It features a collector current capacity of 10A and a breakdown voltage of 60V. The device operates within a junction temperature range of -55°C to 175°C, ensuring reliability in critical environments. Packaged in a TO-3 metal case, it offers robust thermal performance and high gain characteristics suitable for power switching and amplification tasks.
Verify the specific manufacturer source, as the 2N6384 designation is used by multiple vendors including Central Semiconductor and Mospec. Confirm RoHS compliance status, as some sources indicate non-compliance for certain manufacturers. Ensure the TO-3 package dimensions match your board layout requirements before finalizing procurement.
Select this component when high current handling and robust packaging are required. The TO-3 case provides excellent thermal management compared to plastic packages. Consider the 60V breakdown limit and ensure the application voltage remains well below this threshold. Verify that the leaded construction meets your assembly process capabilities.
This part belongs to the family of NPN silicon power transistors utilizing Darlington technology. It is commonly found in legacy industrial equipment and power supplies where high durability is essential. The TO-3 metal can style distinguishes it from modern surface-mount alternatives, offering better thermal resistance for through-hole mounting.
Direct substitutes include parts from Central Semiconductor Corp and Mospec Semiconductor with identical electrical ratings. Verify pinout compatibility and thermal resistance values when swapping between different manufacturers to ensure equivalent performance in the existing circuit design.