2N6386 PBFREE

2N6386 PBFREE

$0.98
  • Description:8A 40V TH TRANSISTOR-BIPOLAR POW
  • Series:-

SKU:fac4fee5754e Category: Brand:

  
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Product Detailed Parameters

  • Description:8A 40V TH TRANSISTOR-BIPOLAR POW
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 6mA, 3A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 3V
  • Power - Max:65 W
  • Frequency - Transition:20MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

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2N6386 PBFREE

Overview

The Central Semiconductor Corp 2N6386 PBFREE is a plastic medium-power silicon NPN Darlington transistor housed in a TO-220-3 through-hole package. It features a maximum collector current of 8A, a collector-base voltage of 40V, and a power dissipation rating of 65W. The device exhibits a gain bandwidth product (fT) of 20MHz and operates within a junction temperature range of -65°C to 150°C or 200°C depending on the specific datasheet source. The component is RoHS compliant and lead-free.

Feature Summary

  • High DC current gain characteristic typical of Darlington configurations
  • Low collector-emitter saturation voltage for efficient switching
  • Robust thermal performance with high power dissipation capability
  • Lead-free plating option available via PBFREE suffix

Applications

  • High-current switching applications
  • Power amplifier circuits
  • Motor control systems
  • Industrial power regulation

Procurement Notes

Verify the exact operating temperature limits and datasheet version when ordering, as sources vary between 150°C and 200°C TJ. Ensure the PBFREE suffix is included if lead-free compliance is required. Confirm package compatibility with TO-220-3 mounting requirements. Cross-reference specifications with the manufacturer's latest documentation to ensure accuracy regarding VCEO(SUS) minimums and thermal resistance values.

Selection Notes

Select this component for applications requiring high current handling up to 8A with moderate voltage ratings of 40V. The Darlington structure provides high gain, reducing drive current requirements compared to standard BJTs. Consider the TO-220 package for adequate heat sinking given the 65W dissipation rating. Evaluate thermal management needs carefully due to the significant power handling capabilities.

Part Context

The 2N6386 belongs to a family of plastic medium-power silicon transistors manufactured by Central Semiconductor Corp. It is often grouped with similar parts like the 2N6666 in TO-220 case studies. The part represents a standard NPN Darlington configuration widely used in general-purpose power electronics where high current gain and robust construction are necessary.

Replacement Considerations

Public confirmed substitutes include generic equivalents from other manufacturers such as STMicroelectronics or ISC Silicon that match the NPN Darlington topology, 8A current rating, and TO-220 package. Verify pinout compatibility and electrical parameters before substitution.

2N6386 PBFREE2N6386 PBFREE
$0.98
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