2N6387

Overview

The Harris Corporation 2N6387 is a power NPN silicon bipolar transistor housed in a TO-220AB flange mount package. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 60 V. The device operates as a single-element component with a minimum DC current gain (hFE) of 100. It supports a maximum power dissipation of 65 W and functions within an operating temperature range up to 150 °C.

Feature Summary

• Integrated Darlington configuration includes built-in diode and resistor for simplified circuit design.

Applications

• Switching applications

Procurement Notes

Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by Intersil and subsequently Renesas. Confirm that the specific part number corresponds to the original Harris datasheet specifications rather than a modern equivalent from the successor entity. Ensure the TO-220AB package and electrical ratings match the required system parameters before procurement.

Selection Notes

Select this component for high-current switching tasks requiring moderate voltage handling. The integrated Darlington structure provides high gain, reducing drive requirements. Consider the thermal management needs due to the 65 W power dissipation rating and the through-hole mounting style suitable for heat sink attachment.

Part Context

This component belongs to the class of power bipolar transistors designed for robust switching operations. It utilizes silicon technology and is packaged in a standard plastic epoxy TO-220AB case. The device is classified under discrete semiconductors and transistors, specifically tailored for industrial or commercial power control circuits.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.