2N6387

Overview

The onsemi 2N6387 is a high-power NPN silicon Darlington transistor housed in a TO-220AB plastic package. It supports a maximum continuous collector current of 10 A and a collector-emitter voltage rating of 60 V. The device features a minimum DC current gain (hFE) of 100 and can dissipate up to 65 W of power at 25°C ambient temperature. Operating temperatures range from -65°C to +150°C, with a collector-base voltage of 60 V and an emitter-base voltage of 5 V.

Feature Summary

• High-current switching capability via integrated Darlington configuration
• Robust thermal performance for high-power dissipation applications
• Durable plastic encapsulation suitable for flange mounting

Applications

• Industrial motor control systems
• Power switching circuits
• High-current relay drivers

Procurement Notes

Verify the manufacturer source carefully as this component may be obsolete or discontinued. Confirm availability through authorized distributors only. Ensure the part number matches exactly to avoid counterfeit risks. Check RoHS compliance status if required by specific project regulations before finalizing procurement decisions.

Selection Notes

Select this component when high current handling and moderate voltage blocking are required in a single package. The TO-220AB form factor facilitates heatsink attachment for thermal management. Consider the 60V limit and 10A current capacity against load requirements. Verify that the Darlington structure's saturation voltage meets system efficiency needs.

Part Context

This device belongs to the family of high-power bipolar junction transistors designed for robust industrial environments. It utilizes silicon technology to provide reliable amplification and switching functions. The TO-220AB package is standard for through-hole mounting in power electronics assemblies requiring substantial current handling capabilities.

Replacement Considerations

Public confirmed substitute part numbers: MJH6287.