2N6388

Overview

The onsemi 2N6388 is a 10A NPN silicon Darlington power transistor housed in a TO-220AB flange-mount package. It features an 80V collector-emitter sustaining voltage and a maximum power dissipation of 65W. The device offers a minimum DC current gain (hFE) of 1000, with typical values reaching 2500 at 4A. Key electrical limits include a collector-base voltage of 80V, emitter-base voltage of 5V, and saturation voltage of 2V at 5A. Operating temperatures range from -65°C to 150°C.

Feature Summary

• High DC current gain suitable for general-purpose amplification
• Flange-mount construction for efficient thermal management
• Robust switching capability with low saturation voltage

Applications

• General-purpose amplifier circuits
• Low-speed switching applications
• Power control systems requiring high input impedance

Procurement Notes

Verify the specific manufacturer suffix or revision code against the official datasheet to ensure compatibility with design requirements. Confirm that the component meets all relevant environmental standards if required by the application. Cross-reference pinout configurations to prevent installation errors during assembly.

Selection Notes

Select this component for designs requiring high current handling with moderate voltage ratings. The TO-220AB package facilitates direct heatsink mounting. Ensure adequate thermal resistance calculations are performed given the 65W dissipation rating. Consider the high hFE for driving loads with minimal base current.

Part Context

This NPN Darlington transistor belongs to the standard discrete semiconductor category. It is designed for robust performance in power electronics. The complementary PNP variant is often used in push-pull configurations. The device serves as a reliable solution for industrial and consumer power control tasks.

Replacement Considerations

The MJF6388 is an electrically similar alternative offering isolated packaging. Verify pinout compatibility before substitution. Other generic Darlington transistors may require different biasing networks due to varying gain characteristics.