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The 2N6420 is a PNP silicon power bipolar junction transistor manufactured by Microchip Technology. It features a TO-66 package, compatible with TO-213AA standards. The device supports a continuous collector current of 1 A and offers a collector-emitter breakdown voltage of 175 V. Maximum power dissipation is rated at 35 W. Transition frequency is specified at 10 MHz.
Verify the manufacturer source carefully as multiple vendors including Central Semiconductor and Mospec produce this part number. Confirm the specific package variant (TO-66 vs TO-213AA) matches your thermal and mechanical requirements. Check datasheet revisions for absolute maximum ratings to ensure compatibility with your circuit's voltage and current limits.
Select this component for applications requiring robust PNP power switching capabilities. Ensure the thermal management solution supports 35 W dissipation in a TO-66 package. Verify that the 175 V breakdown voltage exceeds the peak voltages present in the target circuit to prevent premature failure during operation.
This component belongs to the family of low-frequency silicon power transistors. It serves as a discrete replacement for integrated power modules in legacy designs. The TO-66 steel package provides hermetic sealing suitable for harsh environments.
Public confirmed substitutes include equivalents from Central Semiconductor and Mospec Semiconductor. Cross-reference pinouts and thermal resistance values before substitution.
The transition frequency is specified at 10 MHz.
No, it is designed for through-hole mounting using the TO-66 or TO-213AA package.