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Product Detailed Parameters
- Description：TRANS PNP BIPOLAR TH TO-66
- Series：*
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6422 PBFREE is a silicon PNP power transistor housed in a TO-66 case. It features a collector-emitter voltage of 300 V and a continuous collector current of 2.0 A. The device supports a maximum power dissipation of 35 W with a thermal resistance of 5.0 °C/W. Operating junction temperature ranges from -65 to +200 °C. Electrical characteristics include a minimum DC current gain (hFE) of 8.0 at 1.0 A, a transition frequency of 10 MHz, and a saturation voltage of 0.75 V.
Feature Summary
- Designed for high-speed switching and high-voltage amplifier applications
- Utilizes a robust TO-66 metal case construction
- Capable of handling peak collector currents up to 5.0 A
Applications
- High-speed switching circuits
- High-voltage amplifier stages
- Industrial control systems requiring PNP power transistors
Procurement Notes
Verify the End of Life status before procurement. This component is classified as Stock Only, meaning availability depends entirely on existing inventory rather than active production. Confirm that the PBFREE suffix aligns with environmental compliance requirements for your specific design. Contact engineering support if alternative sourcing assistance is required due to discontinuation.
Selection Notes
Select this component when a high-voltage PNP transistor with a TO-66 package is required. Ensure the circuit operates within the 300 V collector-emitter limit and 2.0 A continuous current rating. Consider the 5.0 °C/W thermal resistance for heat sink calculations. Verify that the 10 MHz transition frequency meets the switching speed requirements of the application.
Part Context
The 2N6422 belongs to the Central Semiconductor 2N6420 series of silicon PNP power transistors. This series includes variants with different voltage ratings, such as the 2N6420 (175 V) and 2N6421 (250 V). The 2N6422 specifically provides a 300 V breakdown voltage, positioning it for medium-to-high voltage power applications compared to its lower-voltage counterparts.
Replacement Considerations
No direct replacement part number is listed by the manufacturer. The datasheet indicates N/A for replacements, classifying the item as Stock Only. Users must identify alternate sources or equivalent components independently.
