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The Microchip Technology 2N6423 is a single PNP bipolar junction transistor designed for power control applications. It features a collector-emitter breakdown voltage of 300 V and a maximum collector current of 2 A. The device supports a maximum power dissipation of 35 W, making it suitable for high-voltage switching tasks. It operates within a temperature range of -65°C to +175°C. The component utilizes a through-hole mounting style with specific lead configurations.
Verify the manufacturer source carefully as multiple vendors produce this part number. Confirm the package type matches your PCB layout requirements. Check RoHS compliance status if environmental regulations apply. Ensure the supplier provides valid datasheets matching the specific vendor's specifications. Validate pinout compatibility before integration.
Select this component when high voltage blocking is required alongside moderate current handling. Consider the 35 W power limit for thermal management design. Evaluate the PNP configuration against circuit logic requirements. Compare alternative manufacturers for package consistency and parameter tolerances. Verify operating temperature ranges match the intended environment.
This part belongs to the category of single bipolar transistors, specifically PNP power types. It is distinct from NPN variants and low-power signal transistors. The 2N6423 designation is standardized across several manufacturers including Central Semiconductor and Boca Semiconductor. It serves as a discrete solution for medium-power high-voltage applications.
Public confirmed substitutes include 2N4296 and 2N4298. Verify electrical parameters such as breakdown voltage and current ratings match or exceed original requirements. Check package dimensions for mechanical fit. Confirm pinout alignment to prevent circuit damage during replacement.