Single Bipolar Transistors 2N6426 APM TIN/LEAD product image

2N6426 APM TIN/LEAD

$0.15
  • Description:500MA 40V TH TRANSISTOR-SMALL SI
  • Series:-

SKU:64a7f50e8688 Category: Brand:

  
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2N6426 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 500MA 40V TH TRANSISTOR-SMALL SI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6426 APM TIN/LEAD

  • Description:500MA 40V TH TRANSISTOR-SMALL SI
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 500mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6426 APM TIN/LEAD

2N6426 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6426 APM TIN/LEAD is a single NPN Darlington transistor designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a maximum DC collector current of 500 mA and offers a minimum DC current gain (hFE) of 20,000 at 5 V and 500 mA. Its transition frequency (fT) is specified at 150 MHz, and it includes a parasitic capacitance of 7.0 pF.

Single Bipolar Transistors Feature Summary

  • High current amplification capability provided by the Darlington configuration
  • Robust voltage handling suitable for medium-power switching applications
  • Low parasitic capacitance supporting high-frequency signal processing

Single Bipolar Transistors Applications

  • High-gain amplifier circuits
  • Power switching modules
  • Driver stages for relay or motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm lead-free compliance status. Ensure the ordering code matches the required package style and terminal finish specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require substantial current gain without external biasing networks. Evaluate thermal management requirements based on the power dissipation limits defined in the datasheet. Confirm that the operating voltage range remains within the specified collector-emitter and collector-base ratings.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor discrete transistor portfolio, specifically categorized under Darlington transistors. It serves as a specialized semiconductor solution for applications demanding high sensitivity and efficient signal amplification in compact through-hole form factors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before integrating alternative components into existing designs.

2N6426 APM TIN/LEAD2N6426 APM TIN/LEAD
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