2N6426 TRA PBFREE

$0.14

Description：500MA 40V TH TRANSISTOR-SMALL SI
Series：-

SKU:8b64e4a81e86 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：500MA 40V TH TRANSISTOR-SMALL SI
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：40 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 500µA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：20000 @ 500mA, 5V
Power - Max：625 mW
Frequency - Transition：150MHz
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N6426 TRA PBFREE

Overview

The 2N6426 TRA PBFREE is an NPN silicon Darlington transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) of 12 V. The device supports a continuous collector current of 500 mA and offers a minimum DC current gain (hFE) of 20,000 at 5 V and 500 mA. It operates within a temperature range of -65°C to +150°C TJ and is housed in a TO-92-3 through-hole package.

Feature Summary

High current gain configuration utilizing a Darlington pair structure for amplified switching capability.

Applications

General-purpose switching circuits requiring high input impedance.

Procurement Notes

Verify the specific ordering suffix when requesting samples or bulk orders. The manufacturer confirms that plating types must be explicitly stated during procurement. Devices with tin/lead plating require the "TIN/LEAD" suffix, while lead-free versions require the "PBFREE" suffix. A Central sales representative will confirm availability for the requested plating type before order fulfillment.

Selection Notes

Select this component for applications necessitating a single NPN Darlington transistor in a through-hole TO-92-3 package. Ensure the design accommodates the 40 V maximum voltage ratings and 500 mA current limits. Verify thermal management requirements for the specified junction temperature range of -65°C to +150°C.

Part Context

This part belongs to the Central Semiconductor discrete semiconductor transistor category, specifically within the Darlington transistor sub-family. It is designed as a single NPN unit intended for through-hole mounting on printed circuit boards. The component is classified under Bipolar Junction Transistors (BJTs) and serves as a standalone amplification or switching element.