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The Central Semiconductor Corp 2N6426 TRA TIN/LEAD is a single NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a continuous collector current of 500 mA and dissipates up to 750 mW of power. Its minimum DC current gain (hFE) is specified as 20,000 at 5 V and 500 mA, while the transition frequency (fT) reaches 150 MHz. Operating temperatures range from -65°C to +150°C.
Verify the specific suffix 'TRA' against official datasheets to confirm tape-and-reel packaging versus bulk variations. Confirm RoHS compliance status and tin/lead plating specifications directly with the manufacturer or authorized distributors before procurement. Ensure the ordering quantity aligns with factory reel requirements if applicable.
Select this component when high current gain is critical for driving loads with minimal base current. The TO-92-3 package suits prototyping and low-volume production. Compare the 150 MHz transition frequency against application bandwidth needs. Verify thermal management requirements given the 750 mW power dissipation limit in enclosed environments.
This part belongs to the 2N6426 series of NPN Darlington transistors manufactured by Central Semiconductor. The series is designed for general-purpose switching and amplification. The TRA suffix typically indicates a specific packaging variant, such as tape and reel, distinct from the standard bulk-packed versions like the APP suffix found in other listings.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for equivalent Darlington transistors with matching voltage and current ratings.