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The Central Semiconductor Corp 2N6426 TRE TIN/LEAD is a single NPN Darlington transistor designed for through-hole mounting in TO-92-3 packages. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 12 V. The device supports a maximum DC collector current of 500 mA with a power dissipation rating of 350 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 20,000 at 5 V and 500 mA, and a transition frequency (fT) of 150 MHz.
Verify the specific ordering suffix to confirm the lead-tin plating specification, as this affects compliance and solderability requirements. Confirm the tape-and-reel packaging format matches your automated assembly equipment capabilities. Ensure the requested quantity aligns with the manufacturer's standard reel size multiples to avoid partial reel handling issues during production.
Select this component when high current gain is required in a compact through-hole form factor. The TO-92-3 package offers a balance of thermal performance and space efficiency for low-power designs. Consider the 150 MHz transition frequency for applications requiring moderate speed switching or amplification beyond basic DC operations.
This part belongs to the 2N6426 series of NPN Darlington transistors manufactured by Central Semiconductor. The series is characterized by high beta values and is commonly used in applications where driving higher currents from low-level control signals is necessary. The tin-lead variant ensures compatibility with traditional soldering processes.
Cross-reference with other NPN Darlington transistors in the TO-92-3 package that meet or exceed the 40 V VCEO and 500 mA IC specifications. Verify pinout compatibility and thermal resistance parameters before substitution.