2N6426

2N6426

$0.05
  • Description:TRANS NPN DARL 40V 0.5A TO92
  • Series:-

SKU:e32f75924f33 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN DARL 40V 0.5A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30000 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N6426

Overview

The onsemi 2N6426 is an NPN Darlington transistor housed in a TO-92 package. It features a collector-emitter voltage of 40 V and a continuous collector current rating of 1.2 A. The device provides high DC current gain, ranging from 20,000 to 300,000 depending on the operating current. Total power dissipation is rated at 625 mW with a thermal resistance junction-to-ambient of 200 °C/W. Operating temperatures span from -55°C to +150°C.

Feature Summary

  • High DC current gain suitable for sensitive signal amplification
  • Robust collector current handling up to 1.2 A
  • Low collector cutoff current for efficient switching

Applications

  • High-gain audio preamplifiers
  • Sensor interface circuits
  • Logic level translation buffers

Procurement Notes

Verify datasheet specifications against application requirements before procurement. Confirm RoHS compliance status as historical records indicate non-compliance for certain manufacturing runs. Ensure proper thermal management is integrated into the design due to the 625 mW power dissipation limit. Validate lead configuration matches the TO-92 standard.

Selection Notes

Select this component when extremely high current gain is required for low-level signals. Compare saturation voltage characteristics against load requirements. Consider the thermal resistance limits for enclosed environments. Verify that the 40 V breakdown voltage meets the circuit's maximum operating conditions.

Part Context

This device belongs to the discrete bipolar transistor family designed for general-purpose amplification. Originally manufactured by Fairchild Semiconductor, production rights were transferred to onsemi. It serves as a high-gain alternative to single-transistor configurations in analog signal processing applications.

Replacement Considerations

The MPSA14 is documented as having similar characteristics. Verify pinout compatibility and electrical parameters before substitution.

FAQ

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 20,000 at a collector current of 10 mA or 500 mA.

What is the collector-emitter saturation voltage?

The saturation voltage is typically 1.2 V at 50 mA and 1.5 V at 500 mA, both with a base current of 0.5 mA.

Is this device suitable for life support systems?

No, the manufacturer explicitly states that products are not authorized for use as critical components in life support devices without written approval.

2N64262N6426
$0.05
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