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The onsemi 2N6426 is an NPN Darlington transistor housed in a TO-92 package. It features a collector-emitter voltage of 40 V and a continuous collector current rating of 1.2 A. The device provides high DC current gain, ranging from 20,000 to 300,000 depending on the operating current. Total power dissipation is rated at 625 mW with a thermal resistance junction-to-ambient of 200 °C/W. Operating temperatures span from -55°C to +150°C.
Verify datasheet specifications against application requirements before procurement. Confirm RoHS compliance status as historical records indicate non-compliance for certain manufacturing runs. Ensure proper thermal management is integrated into the design due to the 625 mW power dissipation limit. Validate lead configuration matches the TO-92 standard.
Select this component when extremely high current gain is required for low-level signals. Compare saturation voltage characteristics against load requirements. Consider the thermal resistance limits for enclosed environments. Verify that the 40 V breakdown voltage meets the circuit's maximum operating conditions.
This device belongs to the discrete bipolar transistor family designed for general-purpose amplification. Originally manufactured by Fairchild Semiconductor, production rights were transferred to onsemi. It serves as a high-gain alternative to single-transistor configurations in analog signal processing applications.
The MPSA14 is documented as having similar characteristics. Verify pinout compatibility and electrical parameters before substitution.
The minimum DC current gain (hFE) is 20,000 at a collector current of 10 mA or 500 mA.
The saturation voltage is typically 1.2 V at 50 mA and 1.5 V at 500 mA, both with a base current of 0.5 mA.
No, the manufacturer explicitly states that products are not authorized for use as critical components in life support devices without written approval.