Single Bipolar Transistors 2N6427 APM TIN/LEAD product image

2N6427 APM TIN/LEAD

$0.15
  • Description:500MA 40V TH TRANSISTOR-SMALL SI
  • Series:-

SKU:21c90e946d73 Category: Brand:

  
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2N6427 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 500MA 40V TH TRANSISTOR-SMALL SI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6427 APM TIN/LEAD

  • Description:500MA 40V TH TRANSISTOR-SMALL SI
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:130MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6427 APM TIN/LEAD

2N6427 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor 2N6427 APM TIN/LEAD is a single NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 12 V. The device supports a maximum continuous collector current of 500 mA with a power dissipation rating of 350 mW. It operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain characteristic typical of Darlington configurations for sensitive switching applications
  • Tin/lead termination finish provided via aerospace-qualified conversion process to mitigate tin whisker formation
  • Single NPN configuration designed for general-purpose amplification and switching tasks

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Low-current switching applications
  • Aerospace and defense electronic assemblies requiring leaded terminations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'APM' against the manufacturer's official documentation to confirm the exact plating specification and testing level. Ensure the required order quantities align with the manufacturer's standard packaging multiples. Confirm RoHS status and compliance details directly with Central Semiconductor prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN Darlington transistor is required in a TO-92-3 package. The 40 V voltage rating suits low-voltage logic interfacing. Verify that the 500 mA current capability meets circuit demands. Consider the tin/lead finish requirement for compatibility with legacy assembly processes or specific reliability standards.

Single Bipolar Transistors Part Context

This part belongs to the 2N642x series of NPN Darlington transistors manufactured by Central Semiconductor. These devices are engineered for high-reliability environments, including military and aerospace sectors. The series offers robust performance in compact through-hole packages, providing high current gain suitable for driving loads from low-power control signals.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2N6427 APM TIN/LEAD are not available in the provided reference data. Cross-reference with other 2N6427 variants only if electrical parameters and pinouts match exactly.

2N6427 APM TIN/LEAD2N6427 APM TIN/LEAD
$0.15
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