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The onsemi 2N6427_D26Z is an NPN Darlington transistor designed for applications requiring extremely high current gain at collector currents up to 1.0 A. It features a collector-emitter voltage of 40 V, continuous collector current of 1.2 A, and total device dissipation of 625 mW in the TO-92 package. The DC current gain ranges from 10,000 to 100,000 depending on operating conditions.
Verify that the D26Z suffix corresponds to the Tape and Reel packaging option with 2,000 units per reel as specified in the datasheet. Confirm the component origin matches the manufacturer's documentation, noting historical transitions between Fairchild Semiconductor and onsemi manufacturing lines.
Select this component when circuit designs demand high current gain without complex biasing networks. Ensure thermal management accommodates the 625 mW power dissipation limit in the TO-92 package. Verify that the 40 V collector-emitter breakdown voltage exceeds the maximum expected circuit voltage.
This part belongs to the 2N6427 series of NPN Darlington transistors. It is functionally similar to the MPSA14 but optimized for specific gain characteristics. The device is sourced from Process 05, indicating a specific manufacturing technology node used by the producer.
The minimum DC current gain is 10,000 at IC = 10 mA and VCE = 5.0 V.
No, the D26Z suffix specifies the Tape and Reel packaging configuration containing 2,000 units per reel; it does not alter the electrical characteristics.