2N6428ABU

Overview

The onsemi 2N6428ABU is an NPN epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 50 V and a collector current (IC) rating of 200 mA. The device supports a maximum power dissipation of 625 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 250 to 650, a collector-emitter saturation voltage (VCE(sat)) of 0.2 V at IC=10mA, and a transition frequency (fT) between 100 MHz and 700 MHz.

Feature Summary

• Epitaxial silicon construction for reliable switching and amplification
• High DC current gain suitable for low-noise applications
• Low saturation voltage for efficient power handling
• Wide bandwidth capability for audio-frequency operations

Applications

• Audio-frequency low-noise amplifier stages
• General-purpose switching circuits
• Linear regulator output stages
• Driver circuits for relay or lamp loads

Procurement Notes

Verify the datasheet revision date and manufacturer origin, as Fairchild Semiconductor assets were acquired by onsemi. Confirm that the 'A' suffix denotes specific binning or testing criteria if required for your design. Ensure the component matches the TO-92 physical dimensions and pinout configuration specified in the official documentation before integration into the final assembly.

Selection Notes

Select this component when a high-gain NPN transistor with moderate voltage ratings is required. The 2N6428ABU offers superior noise performance compared to standard general-purpose transistors. Consider the thermal constraints of the TO-92 package, as the 625 mW dissipation limit requires adequate heat sinking or PCB copper area for sustained operation above room temperature.

Part Context

This part belongs to the legacy Fairchild Semiconductor 2N series of NPN transistors. Originally designed for audio and linear applications, it remains a standard reference for low-noise amplification. The 2N6428A variant typically represents a tighter specification bin within the broader 2N6428 family, ensuring consistent performance across production batches.

Replacement Considerations

The 2N5088 is explicitly referenced in the datasheet for graphical data comparison and serves as a functional equivalent. Other generic NPN transistors with similar VCEO and hFE ratings may substitute the component, provided the package footprint and pinout compatibility are verified against the target circuit design.

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 50 V.

Does the 2N6428A differ electrically from the standard 2N6428?

Yes, the 'A' suffix indicates a specific binning or testing variation, often implying tighter tolerances or different noise figure specifications compared to the base model.

What is the typical noise figure at 100 Hz?

For the 2N6428A, the noise figure is typically 3 dB at 100 Hz with a source resistance of 10 kΩ.