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Product Detailed Parameters
- Description：TRANS NPN 200V 0.1A TO-18
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：200 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 30mA, 10V
- Power - Max：1.8 W
- Frequency - Transition：50MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6430 PBFREE is an NPN silicon transistor from the complementary 2N6430 series, manufactured via epitaxial planar process. It features a collector-base voltage of 200 V and a collector-emitter voltage of 200 V. The device supports a continuous collector current of 500 mA with power dissipation ratings of 1.8 W at case temperature of 25°C and 500 mW at ambient conditions. Operating junction temperature ranges from -65 to +200 °C. The transition frequency (fT) reaches up to 200 MHz under specified test conditions.
Feature Summary
- Designed for high voltage amplifier applications using epitaxial planar technology
- Complementary NPN/PNP configuration within the 2N6430 series
- Capable of operation in extended thermal environments up to +200 °C
Applications
- High voltage amplifier circuits
- General purpose small signal switching
- Linear amplification stages requiring high breakdown voltage
Procurement Notes
Verify that the ordering suffix PBFREE corresponds to lead-free plating as defined by the manufacturer's standard terms. Confirm the TO-18 package mechanical outline matches the design requirements. Ensure the requested quantity aligns with available distribution channels. Cross-reference the specific datasheet revision R2 for accurate electrical limits before finalizing procurement specifications.
Selection Notes
Select this component when circuit designs require high voltage handling capabilities exceeding standard low-voltage transistors. The 200 V collector-emitter rating makes it suitable for specialized analog front ends. Consider the thermal resistance values for heat sinking strategies if operating near maximum power dissipation limits. Verify compatibility with existing PCB footprints for the TO-18 metal can package.
Part Context
This part belongs to the Central Semiconductor 2N6430 series, which includes complementary NPN (2N6430/2N6431) and PNP (2N6432/2N6433) devices. The series is characterized by high voltage tolerance and moderate current handling. The PBFREE designation indicates compliance with lead-free manufacturing standards, distinguishing it from traditional tin-lead plated variants offered by the manufacturer.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the source documentation. Designers should consult official cross-reference tools or contact manufacturer support for verified equivalent components meeting identical electrical and mechanical specifications.
FAQ
What is the maximum collector-emitter voltage for the 2N6430?
The maximum collector-emitter voltage (BVCEO) for the 2N6430 is 200 V.
Does the PBFREE suffix change the electrical performance?
No, the PBFREE suffix only indicates lead-free plating; it does not alter the electrical characteristics or functionality of the transistor.
What is the transition frequency range?
The transition frequency (fT) ranges from 50 MHz to 200 MHz depending on the specific test conditions and bias points.
