2N6432 TIN/LEAD

Overview

The 2N6432 TIN/LEAD is a PNP silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 200 V and a continuous collector current of 100 mA. The device is housed in a hermetically sealed TO-18 metal can package, suitable for through-hole mounting. Key electrical characteristics include a DC current gain (hFE) of at least 40 at 10 mA and 10 V, and a transition frequency of 50 MHz. Power dissipation is rated at 1.8 W, with an operating junction temperature range from -65°C to 200°C.

Feature Summary

• Hermetically sealed TO-18 metal can construction for environmental protection
• High collector-emitter breakdown voltage capability of 200 V
• Wide operating junction temperature range extending to 200°C
• Complementary pairing availability within the 2N6430-6433 series

Applications

• High-voltage switching circuits
• Linear amplifier stages requiring high voltage tolerance
• Industrial control systems operating in extreme temperatures
• Military and aerospace electronic assemblies

Procurement Notes

Verify that the specific order suffix matches the required lead content specification, as the standard 2N6432 may be available in lead-free variants. Confirm the manufacturer's datasheet version aligns with the requested tin/lead plating configuration. Ensure procurement channels source directly from authorized distributors to guarantee component authenticity and traceability. Check for RoHS compliance status if the application requires it, noting that this specific variant contains lead.

Selection Notes

Select this component when circuit design demands a PNP transistor with high voltage blocking capabilities in a ruggedized metal package. The TO-18 form factor provides superior thermal stability and hermetic sealing compared to plastic packages. Consider the 1.8 W power rating and 50 MHz frequency response for appropriate biasing and load conditions. Verify that the complementary NPN counterpart is available if push-pull configurations are required.

Part Context

The 2N6432 belongs to a family of complementary silicon transistors produced by Central Semiconductor Corp. It serves as the PNP counterpart to the 2N6430 and 2N6431 NPN devices. This series is designed for medium-power applications requiring reliability in harsh environments. The TO-18 metal case is a legacy standard often mandated for military and space-grade electronics where hermetic sealing is critical.

Replacement Considerations

Direct substitutes include the 2N6433 PNP transistor from the same complementary series. Other generic replacements must match the 200V Vceo, 100mA Ic, and TO-18 package constraints. Verify pinout compatibility (Emitter, Base, Collector) before substitution.